Zeeman splitting of single semiconductor impurities in resonant tunneling heterostructures
نویسندگان
چکیده
Zeeman splitting of the ground state of single impurities in the quantum wells of resonant tunneling heterostructures is reported. We determine the absolute magnitude of the effective magnetic spin splitting factor g∗ ⊥ for a single impurity in a 44 Å Al0.27Ga0.73As/GaAs/Al0.27Ga0.73As quantum well to be 0.28 ± 0.02. This system also allows for independent measurement of the electron tunneling rates through the two potential barriers and estimation of the occupation probability of the impurity state in the quantum well. c © 1996 Academic Press Limited
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تاریخ انتشار 1996